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BB506M Renesas (https://www.renesas.com/) Technology Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Description BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outlin...
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz)
• Low noise NF = 1.4 dB typ. (f = 900 MHz)
• Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)
• Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4...

Datasheet PDF File BB506M Datasheet - 165.18KB

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