| Description | RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline RENESAS Package code: PRSS0005ZB-A (Packag... |
| Features |
Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 Di... |
| Datasheet |
 RJQ6008DPM Datasheet - 109.31KB |
