MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Pure Sn (Tin)
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
TO-252 (MP-3ZK) typ. 0.27 g
• Channel temperature 175 degree rated
• Low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance
Ciss = 3500 pF TYP. (VDS = 25 V)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Tch 175 °C
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
−55 to +175
IAR 33 A
EAR 109 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
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Document No. D18320EJ2V0DS00 (2nd edition)
Date Published May 2008 NS
Printed in Japan
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