http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Renesas Electronics Components Datasheet

N0600N Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

N0600N pdf
N0600N
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0220EJ0100
Rev.1.00
Jan 25, 2011
Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on)1 = 25 mMAX. (VGS =10 V, ID = 15 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low input capacitance
Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.
N0600N-S17-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50p/tube
Package
Isolated TO-220
typ. 2.2 g
Note: 1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±30
±60
20
2.0
150
55 to +150
9.2
12.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
6.25
62.5
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V
°C/W
°C/W
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

N0600N Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

N0600N pdf
N0600N
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
1.5
4
Typ
2.0
17.5
22.3
1380
186
109
5.7
6.3
33.2
3.9
29.8
4.2
9.0
0.92
30
39.6
Max
1
±100
2.5
25
36
1.5
Chapter Title
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 15 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 30 A
IF = 30A, VGS = 0 V
IF = 30 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number N0600N
Description MOS FIELD EFFECT TRANSISTOR
Maker Renesas
Total Page 8 Pages
PDF Download
N0600N pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 N0600N MOS FIELD EFFECT TRANSISTOR Renesas
Renesas
N0600N pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components