| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 250V RDS(on) （TYP)= 0.4Ω ID = 8A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.47Ω) ● Low Gate Charge(Typical Data:12nC) ● Low Reverse Transfer Capacitances(Ty... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤0.47Ω) ● Low Gate Charge(Typical Data:12nC) ● Low Reverse Transfer Capacitances(Typical:7pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Automotive,DC Motor C... |
| Datasheet |
 B8N25 Datasheet - 1.42MB |
