http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Rohm Semiconductor Electronic Components Datasheet

B1436 Datasheet

2SB1436

No Preview Available !

B1436 pdf
Transistors
2SB1386 / 2SB1412 / 2SB1326
Low frequency transistor (20V, 5A)
www.datasheet4u.com
2SB1386 / 2SB1412 / 2SB1326
!Features
1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain
characteristics.
3) Complements the 2SD2098 /
2SD2118 / 2SD2097.
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1386
4.5+−00..21
1.6±0.1
1.5−+00..12
2SB1412
6.5±0.2
5.1−+00..12
C0.5
2.3−+00..12
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4−+00..015
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BH
2SB1326
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
Denotes hFE
(1) Emitter
(2) Collector
(3) Base


Rohm Semiconductor Electronic Components Datasheet

B1436 Datasheet

2SB1436

No Preview Available !

B1436 pdf
Transistors
2SB1386 / 2SB1412 / 2SB1326
!Absolute maximum ratings (Ta=25°C)
Parameter
www.datasheet4Cuo.clloemctor-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
30
20
6
5
10
Unit
V
V
V
A(DC)
A(Pulse) 1
2SB1386
Collector power
dissipation
2SB1412
PC
0.5 W
2 W 2
1W
10 W(TC=25°C)
2SB1326
1 W 3
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55~+150
°C
1 Single pulse, Pw=10ms
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current
transfer ratio
2SB1386,2SB1412
hFE
2SB1326
Min.
30
20
6
82
120
Transition frequency
Output capacitance
Measured using pulse current.
fT
Cob
Typ.
120
60
Max.
0.5
0.5
1.0
390
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−5V
IC/IB=−4A/0.1A
VCE=−2V, IC=−0.5A
VCE=−6V, IE=50mA, f=30MHz
VCB=−20V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SB1386
2SB1412
PQR
PQR
2SB1326 QR
T100
1000
Taping
TL
2500
TV2
2500
hFE values are classified as follows :
Item P
Q
hFE 82~180 120~270
R
180~390


Part Number B1436
Description 2SB1436
Maker ROHM Electronics
Total Page 4 Pages
PDF Download
B1436 pdf
Download PDF File
B1436 pdf
View for Mobile






Related Datasheet

1 B1430 2SB1430 SavantIC
SavantIC
B1430 pdf
2 B1431 PNP Silicon Epitaxial Transistor NEC
NEC
B1431 pdf
3 B1432 PNP SILICON EPITAXIAL TRANSISTOR NEC
NEC
B1432 pdf
4 B1434 2SB1434 Panasonic Semiconductor
Panasonic Semiconductor
B1434 pdf
5 B1436 2SB1436 ROHM Electronics
ROHM Electronics
B1436 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components