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Rohm Semiconductor Electronic Components Datasheet

B1340 Datasheet

2SB1340

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B1340 pdf
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Spwwewc.DifaitacSaheteit4oUn.com
2SB1340
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-6 A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-10 A
2
W
30
150
-55~150
isc Websitewww.iscsemi.cn


Rohm Semiconductor Electronic Components Datasheet

B1340 Datasheet

2SB1340

No Preview Available !

B1340 pdf
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Spwwewc.DifaitacSaheteit4oUn.com
2SB1340
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA ; IE= 0
-120
-120
V
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -6mA
ICBO Collector Cutoff Current
VCB= -120V ; IE= 0
-1.5 V
-100 μA
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
-3 mA
hFE DC Current Gain
IC= -2A ; VCE= -3V
2000
20000
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V; ftest= 1MHz
IE= 0.5A ; VCE= -5V; ftest= 10MHz
70
12
pF
MHz
isc Websitewww.iscsemi.cn
2


Part Number B1340
Description 2SB1340
Maker ROHM Electronics
Total Page 2 Pages
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