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Rohm Semiconductor Electronic Components Datasheet

B1316 Datasheet

2SB1316

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B1316 pdf
Transistors
Power Transistor (100V , 2A)
2SB1316
2SB1316
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
100
100
Emitter-base voltage
Collector current
Collector 2SB1580
power
dissipation 2SB1316
VEBO
IC
PC
8
2
3
2
1
10
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
1 Single pulse Pw=100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
1
W 2
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1580
MPT3
1k to 10k
BN
T100
1000
2SB1316
CPT3
1k to 10k
TL
2500
zEquivalent circuit
C
B
R1 R2
E
R1 3.5k
R2 300
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SB1580
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1316
5.5 1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
TO-252(DPAK)
1.5
2.5
9.5
C0.5
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
100
100
10
1000
Typ.
50
35
Max.
10
3
1.5
10000
Unit
V
V
V
µA
mA
V
MHz
pF
Conditions
IC = −50µA
IC = −5mA
IE = −5mA
VCB = −100V
VEB = −7V
IC/IB= −1A/1mA
VCE = −2V , IC = −1A
VCE = −5V , IE =0.1A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

B1316 Datasheet

2SB1316

No Preview Available !

B1316 pdf
Transistors
zElectrical characteristics curve
2.0
1mA
0.9mA
1.6 0.8mA
0.7mA
1.2
0.8
0.6mA
0.5mA
0.4mA
Ta=25°C
IB= −0.3mA
0.4
0
0
1 2
3 4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output characteristics
10
Ta=25°C
5 VCE= −2V
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
2SB1316
10k
Ta=25°C
5k VCE= −2V
2k
1k
500
200
100
50
20
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
50
Ta=25°C
IC / IB =1000
20
10
5
2
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
COLLECTOR CURRENT : IC (A)
10
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500 IE=0A
f=1MHz
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Collector output capacitance
vs. collector-base voltage
50
20
10
5 Ic Max. (Pulse)
2
DC
1
500m
Ta=25°C
Single
NONREPETITIVE
PULSE
Pw=10ms
Pw=100ms
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.6 Safe Operating area (2SB1580)
50
20
10
5 Ic Max. (Pulse)
2
DC
1
500m
Ta=25°C
Single
NONREPETITIVE
PULSE
Pw=10ms
Pw=100ms
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe Operating area (2SB1316)
Rev.A
2/2


Part Number B1316
Description 2SB1316
Maker ROHM
Total Page 3 Pages
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