http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Rohm Semiconductor Electronic Components Datasheet

2SA2071 Datasheet

Middle Power transistor

No Preview Available !

2SA2071 pdf
2SA2071
Middle Power transistor (-60V, -3A)
Parameter
VCEO
IC
Value
-60V
-3A
lFeatures
1)High speed switching.
2)Low saturation voltage.
 (Typ.:-200mV at IC=-2A, lB=-0.2A)
3)Strong discharge power for inductive load and
  capacitance load.
4)Complements the 2SC5824
lOutline
  SOT-89
  SC-62
MPT3
lInner circuit
 
 
 
 
 
Datasheet
lApplication
LOW FREQUENCY AMPLIFIER,HIGH SPEED SWITCHING
lPackaging specifications
Part No.
Package
Package
size
2SA2071
SOT-89
(MPT3)
4540
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T100
180
12
1000
UN
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/6
20150810 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

2SA2071 Datasheet

Middle Power transistor

No Preview Available !

2SA2071 pdf
2SA2071
          
                Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
PD*3
Tj
Tstg
Values
-60
-60
-6
-3
-6
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -100μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage BVEBO IE = -100μA
Collector cut-off current
ICBO VCB = -40V
Emitter cut-off current
IEBO VEB = -4V
Collector-emitter saturation voltage VCE(sat)*4 IC = -2A, IB = -0.2A
DC current gain
hFE VCE = -2V, IC = -100mA
Transition frequency
f
*4
T
VCE = -10V, IE = 100mA,
f = 10MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
Min.
-60
-60
-6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
-200
-
180
50
Max.
-
-
-
-1.0
-1.0
-500
270
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
ton IC = -3A,
IB1 = -300mA,
tstg
IB2 = 300mA,
VCC -25V,
tf
RL = 8.3Ω
See test circuit
- 20 -
- 150 -
- 20 -
                                        
hFE values are calssified as follows :
                              
rank Q
-
-
-
-
hFE 120-270
-
-
-
-
ns
ns
ns
*1 Pw10μs duty10%
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40×40×0.7mm).
*4 Pulsed
                                            
 
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20150810 - Rev.002


Part Number 2SA2071
Description Middle Power transistor
Maker ROHM
Total Page 9 Pages
PDF Download
2SA2071 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 2SA2070 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor
Toshiba Semiconductor
2SA2070 pdf
2 2SA2071 Middle Power transistor ROHM
ROHM
2SA2071 pdf
3 2SA2071P5 Power transistor ROHM
ROHM
2SA2071P5 pdf
4 2SA2072 High voltage discharge / High speed switching / Low Noise Rohm
Rohm
2SA2072 pdf
5 2SA2073 High voltage discharge Rohm
Rohm
2SA2073 pdf
6 2SA2074 Silicon PNP epitaxial planar type Power Transistors Panasonic
Panasonic
2SA2074 pdf
7 2SA2075 Silicon PNP epitaxial planar type Power Transistors Panasonic
Panasonic
2SA2075 pdf
8 2SA2077 Silicon PNP epitaxial planar type Transistors Panasonic
Panasonic
2SA2077 pdf
9 2SA2078 Silicon PNP epitaxial planar type Power Transistors Panasonic
Panasonic
2SA2078 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components