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RF Micro Devices
RF Micro Devices

RF2304 Datasheet Preview

RF2304 Datasheet

GENERAL PURPOSE LOW-NOISE AMPLIFIER

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RF2304 pdf
RF2304
4 GENERAL PURPOSE LOW-NOISE AMPLIFIER
Typical Applications
• Receive or Transmit Low-Noise Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Wireless LAN
• ISM Band Applications
Product Description
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5GHz. With +6dBm
output power, it may also be used as a driver in transmit-
ter applications, or in highly linear receivers. The device is
packaged in an 8-lead plastic package and is self-con-
tained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
0.196
0.189
8° MAX
0° MIN
0.157
0.150
0.244
0.229
0.034
0.016
0.018
0.014
0.008
0.004
-A-
0.050
Dimensions in mm
0.068
0.053
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GND 1
GND 2
RF IN 3
GND 4
8 NC
7 VDD
6 RF OUT
5 GND
Package Style: SOIC-8
Features
• Single 2.7V to 6.0V Supply
• 6dBm Output Power
• 8dB Small Signal Gain at 900MHz
• 1.8dB Noise Figure at 900MHz
• Low DC Current Consumption of 5mA
• 300MHz to 2500MHz Operation
Ordering Information
RF2304
General Purpose Low-Noise Amplifier
RF2304 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev A5 010717
4-57



RF Micro Devices
RF Micro Devices

RF2304 Datasheet Preview

RF2304 Datasheet

GENERAL PURPOSE LOW-NOISE AMPLIFIER

No Preview Available !

RF2304 pdf
RF2304
Absolute Maximum Ratings
Parameter
Supply Voltage (VDD)
DC Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.5
40
+10
-40 to +85
-40 to +150
Unit
VDC
mA
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
4 Operating Range
Overall Frequency Range
300
2500
MHz
Supply Voltage
2.7
6.0 V
Operating Current (ICC)
8.4 mA VCC=3V, Temp=27°C
7 11 26 mA VCC=5V, Temp=27°C
Operating Ambient Temperature
-40
+85 °C
3V Performance
Gain
11.7
dB Freq=300MHz, VCC=3V, Temp=27°C
Gain
8.5 dB Freq=900MHz, VCC=3V, Temp=27°C
Noise Figure
1.9 dB
Input IP3
+6.9
dBm
OP1dB
+7.5
dBm
Gain
9.2 dB Freq=1950MHz, VCC=3V, Temp=27°C
Noise Figure
1.7 dB
Input IP3
+8.6
dBm
OP1dB
+6.9
dBm
Gain
8.2 dB Freq=2450MHz, VCC=3V, Temp=27°C
Noise Figure
1.7 dB
Input IP3
+10.5
dBm
OP1dB
+7.5
dBm
5V Performance
Gain
12.5
dB Freq=300MHz, VCC=5V, Temp=27°C
Gain
10 12 14 dB Freq=900MHz, VCC=5V, Temp=27°C
Noise Figure
1.9 dB
Input IP3
+8.4
dBm
OP1dB
+8.7
dBm
Gain
9.8 dB Freq=1950MHz, VCC=5V, Temp=27°C
Noise Figure
1.9 dB
Input IP3
+10.0
dBm
OP1dB
+8 dBm
Gain
6 8 11 dB Freq=2450MHz, VCC=5V, Temp=27°C
Noise Figure
1.6 dB
Input IP3
+8.0
dBm
OP1dB
+6 dBm
4-58
Rev A5 010717


Part Number RF2304
Description GENERAL PURPOSE LOW-NOISE AMPLIFIER
Maker RF Micro Devices
Total Page 9 Pages
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