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RF Micro Devices
RF Micro Devices

RF2301 Datasheet Preview

RF2301 Datasheet

HIGH ISOLATION BUFFER AMPLIFIER

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RF2301 pdf
RF2301
4 HIGH ISOLATION BUFFER AMPLIFIER
Typical Applications
• Local Oscillator Buffer Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Wireless LAN
• ISM Band Applications
Product Description
The RF2301 is a high reverse isolation buffer amplifier.
The device is manufactured on a low-cost Gallium Ars-
enide MESFET process, and has been designed for use
as a general purpose buffer in high-end communication
systems operating at frequencies from less than 300MHz
to higher than 2500MHz. With +5dBm output power, it
may also be used as a driver in transmitter applications.
The device is packaged in an 8-lead plastic package. The
product is self-contained, requiring just a resistor and
blocking capacitors to operate. The output power, com-
bined with 50dB reverse isolation at 900MHz allows
excellent buffering of LO sources to impedance changes.
The device can be used in 3V battery applications. The
unit has a total gain of 17dB with only 14mA current from
a 3V supply.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GND 1
GND 2
RF IN 3
GND 4
8 VDD1
7 VDD2
6 RF OUT
5 GND
0.196
0.189
0.018
0.014
0.050
0.008
0.004
-A-
8° MAX
0° MIN
0.157
0.150
0.244
0.229
0.034
0.016
Dimensions in mm
0.068
0.053
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Package Style: SOIC-8
Features
• Single 2.7V to 6.0V Supply
• +4dBm Output Power
• 21dB Small Signal Gain
• 50dB Reverse Isolation at 900MHz
• Low DC Current Consumption of 14mA
• 300MHz to 2500MHz Operation
Ordering Information
RF2301
High Isolation Buffer Amplifier
RF2301 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev A8 010717
4-37



RF Micro Devices
RF Micro Devices

RF2301 Datasheet Preview

RF2301 Datasheet

HIGH ISOLATION BUFFER AMPLIFIER

No Preview Available !

RF2301 pdf
RF2301
Absolute Maximum Ratings
Parameter
Supply Voltage (VDD)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.5
60
+10
-40 to +85
-40 to +150
Unit
VDC
mA
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
4 Overall
Nominal Frequency Range
300 to 2500
MHz
T=25°C, VDD=5VDC
Input IP3
-8 dBm
Noise Figure
8 dB
Input VSWR
<2:1
In a 50system
Output VSWR
<2:1
In a 50system
Power Supply Voltage
2.7 to 6.0
V
Nominal 5V Configuration
Using Broad Band Application Circuit,
VDD=5VDC, Freq=2500MHZ, T=25°C
Gain
21 24 26 dB
P1dB Output Power
+4 dBm
Supply Current
10 30 40 mA
Reverse Isolation
50 dB 900MHz, without RF input
50 dB 900MHz, with RF input, saturated
40 dB 2500MHz, without RF input
40 dB 2500MHz, with RF input, saturated
Nominal 3V Configuration
Using Broad Band Application Circuit,
VDD=3VDC, Freq=2500MHZ, T=25°C
Gain
15 17
dB
P1dB Output Power
0 dBm
Supply Current
14 mA
Reverse Isolation
50 dB 900MHz, without RF input
50 dB 900MHz, with RF input, saturated
40 dB 2500MHz, without RF input
40 dB 2500MHz, with RF input, saturated
4-38
Rev A8 010717


Part Number RF2301
Description HIGH ISOLATION BUFFER AMPLIFIER
Maker RF Micro Devices
Total Page 10 Pages
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