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QID3320004 Datasheet Preview

QID3320004 Datasheet

Dual IGBT HVIGBT Module

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QID3320004 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3320004
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
M
1
G (3TYP)
T
(SCREWING
DEPTH - 3 TYP)
23
H
H
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
42
8
7
1
5
63
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.50
38.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.04
0.16
M5 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
26.5
4.0
M5
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
UL Recognized (E78240)
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1



Powerex
Powerex

QID3320004 Datasheet Preview

QID3320004 Datasheet

Dual IGBT HVIGBT Module

No Preview Available !

QID3320004 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Collector Current (TC = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 VRMS, V2 = 2600 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)
Symbol QID3320004 Units
Tj -50 to +150 °C
Top -50 to +150 °C
Tstg
-55 to +150
°C
VCES 3300 Volts
VGES ±20 Volts
IC 200 Amperes
IC 370 Amperes
ICM 400* Amperes
IF 200 Amperes
IFM 400* Amperes
I2t 15 kA2sec
PC 2080 Watts
— 35 in-lb
— 44 in-lb
— 800 Grams
Viso 6.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
IC = 200A, VGE = 15V, Tj = 125°C
IC = 200A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 170A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IE = 200A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— — 0.5 µA
5.5 6.0
6.5 Volts
2.7***
3.0
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 1.8 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 6


Part Number QID3320004
Description Dual IGBT HVIGBT Module
Maker Powerex
Total Page 6 Pages
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