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QID1210005 Datasheet Preview

QID1210005 Datasheet

Split Dual Si/SiC Hybrid IGBT Module

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QID1210005 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID1210005
Split Dual Si/SiC
Hybrid IGBT Module
100 Amperes/1200 Volts
B
M
G
A
D
F
Q
Q
PQ
123
E2
456
C2
789
E1
10 11 12
C1
G2 S2
20 19 18 17
L
R
DETAIL "B"
G1 S1
16 15 14 13
ST
DETAIL "A"
HC
C1 (10 - 12)
C2 (4 - 6)
Y
AA
AB
Z
DETAIL "B"
AC
U
X
NE
W
V
KT
DETAIL "A"
G1 (15 - 16)
E1 (13 - 14)
E1 (7 - 9)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
K
L
M
N
P
Inches
4.32
2.21
0.71
3.70±0.02
2.026
3.17
1.96
1.00
0.87
0.266
0.26
0.59
0.586
Millimeters
109.8
56.1
18.0
94.0±0.5
51.46
80.5
49.8
25.5
22.0
6.75
6.5
15.0
14.89
G2 (19 - 20)
E2 (17 - 18)
E2 (1 - 3)
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
Inches
0.449
0.885
1.047
0.15
0.16
0.30
0.045
0.03
0.16
0.47
0.17 Dia.
0.10 Dia.
0.08 Dia.
Millimeters
11.40
22.49
26.6
3.80
4.0
7.5
1.15
0.8
4.0
12.1
4.3 Dia.
2.5 Dia.
2.1 Dia.
12/12 Rev. 2
Description:
Powerex IGBT Modules are
designed for use in high frequency
applications; upwards of 30 kHz
for hard switching applications
and 80 kHz for soft switching
applications. Each module consists
of two IGBT Transistors with each
transistor having a reverse-
connected super-fast recovery
free-wheel silicon carbide Schottky
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low ESW(off)
£ Aluminum Nitride Isolation
£ Discrete Super-Fast
Recovery Free-Wheel Silicon
Carbide Schottky Diode
£ Low Internal Inductance
£ 2 Individual Switches
per Module
£ Isolated Baseplate for Easy
Heat Sinking
£ Copper Baseplate
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
1



Powerex
Powerex

QID1210005 Datasheet Preview

QID1210005 Datasheet

Split Dual Si/SiC Hybrid IGBT Module

No Preview Available !

QID1210005 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol QID1210005 Units
Tj
–40 to 150
°C
Tstg
–40 to 150
°C
VCES 1200 Volts
VGES ±20 Volts
IC 100* Amperes
ICM 200* Amperes
IE 80* Amperes
IEM 455* Amperes
PC 730 Watts
— 40 in-lb
— 270 Grams
VISO 2500 Volts
IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
— —
1.0 mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
— —
0.5 µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5 6.0
7.5 Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 100A, VGE = 15V, Tj = 125°C
— 5.0
— Volts
Total Gate Charge
QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC
Input Capacitance
Cies
— —
16 nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
— —
1.3 nf
Reverse Transfer Capacitance
Cres
— — 0.3 nf
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 100A,
— — TBD ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
TBD
ns
Switch
Turn-off Delay Time
td(off)
RG = 3.1Ω,
— — TBD ns
TimeFall Time
tf
Inductive Load Switching Operation
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi).
2 12/12 Rev. 2


Part Number QID1210005
Description Split Dual Si/SiC Hybrid IGBT Module
Maker Powerex
Total Page 7 Pages
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