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Polyfet RF Devices
Polyfet RF Devices

F1206 Datasheet Preview

F1206 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1206 pdf
polyfet rf devices
F1206
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
8 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.5 oC/W
200 oC
-65 oC to 150oC
2A
50 V
50 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
10
η Drain Efficiency
60
VSWR Load Mismatch Toleranc
8WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.4 A, Vds = 12.5 V, F = 500 MHz
% Idq = 0.4 A, Vds = 12.5 V, F = 500 MHz
20:1 Relative Idq = 0.4 A, Vds = 12.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Curren
1 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8A
Idsat
Saturation Curren
7.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
40 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
6 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
30 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1206 Datasheet Preview

F1206 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1206 pdf
POUT VS PIN GRAPH
F1206
100
10
CAPACITANCE VS VOLTAGE
F1C 1DIE CAPACITANCE
Coss
Ciss
Crss
IV CURVE
8
7
6
5
4
3
2
1
0
02
Vg = 2V
F1C 1DIE IV CURVE
46
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
S11 AND S22 SMITH CHART
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F1C 1DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1206
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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9 F1206 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices
F1206 pdf








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