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Polyfet RF Devices
Polyfet RF Devices

F1108 Datasheet Preview

F1108 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1108 pdf
polyfet rf devices
F1108
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
80 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
170 Watts
0.95 oC/W
200 oC
-65oC to 150oC
8A
70 V
70V 30V
RF CHARACTERISTICS ( 80WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Pow er Gain
11
dB Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
55 % Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdow n Voltage
65
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Current
2 mA Vds = 28.0V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.2 A, Vgs = Vds
gM Forw ard Transconductance
2 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.7
Ohm
Vgs = 20V, Ids = 8 A
Idsat
Saturation Current
12
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
10
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com




Polyfet RF Devices
Polyfet RF Devices

F1108 Datasheet Preview

F1108 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1108 pdf
F1108
POUT VS PIN GRAPH
F1108 POUTVSPIN F=400
MHZ; IDQ=0.8A; VDS=28.0V
90 15.50
80
70
60
50
40
30
20 Efficiency = 55%
10
0
14.50
13.50
12.50
11.50
10.50
9.50
0123456
PININ WATTS
POUT GAIN
IV CURVE
18
16
14
12
10
8
6
4
2
0
0
2
Vg = 2V
F1J 2 DIE IV CU RVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
CAPACITANCE VS VOLTAGE
F1J 2 DICE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
0
100.00
10.00
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
F1J2 DICE ID&GMVsVG
Id
gM
1.00
30
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com




Part Number F1108
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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