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Polyfet RF Devices
Polyfet RF Devices

F1016 Datasheet Preview

F1016 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1016 pdf
polyfet rf devices
F1016
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
20 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
100 Watts
1.75 oC/W
200 oC
-65oC to 150oC
4A
70 V
70V 30V
RF CHARACTERISTICS ( 20WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Pow er Gain
13
dB Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdow n Voltage
65
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Current
1 mA Vds = 28.0V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forw ard Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
1
Ohm
Vgs = 20V, Ids = 4 A
Idsat
Saturation Current
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
4
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com




Polyfet RF Devices
Polyfet RF Devices

F1016 Datasheet Preview

F1016 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1016 pdf
F1016
POUT VS PIN GRAPH
F1016 POUT VS PI N F=400 MHZ; IDQ=.4A; VDS=28.0V
50
45
40
35
30
25
20
15
10
0
Efficiency = 65%
123
P IN IN WATT S
4
5
POUT
19.00
18.00
17.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
6
GAI N
IV CURVE
100
10
1
0
CAPACITANCE VS VOLTAGE
F1B 1 DIE Capac itance vs Vds
Coss
Ciss
Crss
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
30
6
5
4
3
2
1
0
02
Vg = 2V
F1B 1D IE I V CURVE
46
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
F1B 1 D IE GM & I D vs VG
10
Id
1
Gm
0.1
0.01
0 2 4 6 8 10 12 14
Vgs inVolts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com




Part Number F1016
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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