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Panasonic Electronic Components Datasheet

XN0F261 Datasheet

Silicon NPN epitaxial planar type

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XN0F261 pdf
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Composite Transistors
XN0F261
Silicon NPN epitaxial planar type
For muting
Features
Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
5
600
300
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
Mini6-G1 Package
Marking Symbol: 6B
Internal Connection
45
6
Tr2 Tr1
Electrical Characteristics Ta = 25°C ± 3°C
32 1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0
30 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
5V
Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
1 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 50 mA
100 600
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 2.5 mA
80 mV
Input resistance
R1
30% 3.3 +30% k
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJJ00228AED
1


Panasonic Electronic Components Datasheet

XN0F261 Datasheet

Silicon NPN epitaxial planar type

No Preview Available !

XN0F261 pdf
XN0F261
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
0.7
Ta = 25°C
IB = 2.0 mA
0.6
1.6 mA
0.5 1.2 mA
0.4
0.8 mA
0.3
0.2 0.4 mA
0.1
0
0123456
Collector-emitter voltage VCE (V)
IC VBE
120
VCE = 5 V
100
Ta = 75°C
80 25°C
25°C
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5
Base-emitter voltage VBE (V)
VCE(sat) IC
1
IC / IB = 20
0.1
Ta = 75°C
25°C – 25°C
0.01
0.001
0.01 0.1
Collector current IC (A)
1
IC IB
50 VCE = 5 V
Ta = 25˚C
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
hFE IC
600
VCE = 5 V
500 Ta = 75°C
400 25°C
300 25°C
200
100
0
0.001
0.01 0.1
Collector current IC (A)
1
2 SJJ00228AED


Part Number XN0F261
Description Silicon NPN epitaxial planar type
Maker Panasonic Semiconductor
Total Page 3 Pages
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