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Panasonic Electronic Components Datasheet

D1485 Datasheet

2SD1485

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D1485 pdf
Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1054
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
100
100
5
8
5
60
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
swww.DatEaSlehceterti4cUa.lcoCmharacteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
P
hFE2 60 to 120 100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2V
20 MHz
90 pF
1



Panasonic Electronic Components Datasheet

D1485 Datasheet

2SD1485

No Preview Available !

D1485 pdf
Power Transistors
80
70
(1)
60
50
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.0W)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8
IB=100mA
6
80mA
60mA
4
40mA
2 20mA
10mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1485
IC — VBE
8
VCE=5V
7
25˚C
6 TC=100˚C –25˚C
5
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
25˚C
0.3
TC=100˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
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Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
0.3
10ms
DC
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
10000
3000
1000
300
100
30
10
hFE — IC
TC=100˚C
25˚C
–25˚C
VCE=5V
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Rth(t) — t
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
10 (2)
1
10–1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2




Part Number D1485
Description 2SD1485
Maker Panasonic Semiconductor
Total Page 2 Pages
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