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Panasonic Electronic Components Datasheet

D1450 Datasheet

2SD1450

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D1450 pdf
Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Low collector to emitter saturation voltage VCE(sat).
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25˚C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
12
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Ron*3
VCB = 25V, IE = 0
100 nA
IC = 10µA, IE = 0
25
V
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 1A*2
IC = 500mA, IB = 20mA*2
IC = 500mA, IB = 20mA*2
20
12
200 800
60
0.13 0.4
1.2
V
V
V
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
10 pF
0.6
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 200 ~ 350 300 ~ 500
T
400 ~ 800
*3Ron Measurement circuit
1k
IB=1mA
VB VV VA
Ron=
VB
VA–VB
!1000()
f=1kHz
V=0.3V
1
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Panasonic Electronic Components Datasheet

D1450 Datasheet

2SD1450

No Preview Available !

D1450 pdf
Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=25
30
10
3
1
0.3 Ta=75˚C
25˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
20
IE=0
f=1MHz
Ta=25˚C
16
12
8
4
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
2.4
Ta=25˚C
2.0
1.6
IB=4.0mA
3.5mA
1.2 3.0mA
2.5mA
2.0mA
0.8
1.5mA
1.0mA
0.4
0.5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1200
1000
hFE — IC
VCE=2V
800
Ta=75˚C
600 25˚C
–25˚C
400
200
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
NV — IC
120
VCE=10V
GV=80dB
Function=FLAT
100
80
Rg=100k
60
22k
40
5k
20
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
2SD1450
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1 Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IE
400
VCB=10V
Ta=25˚C
350
300
250
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2
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Part Number D1450
Description 2SD1450
Maker Panasonic Semiconductor
Total Page 2 Pages
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