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Panasonic Electronic Components Datasheet

D1272 Datasheet

2SD1272

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D1272 pdf
Power Transistors
2SD1272
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
200
150
6
2.5
1
0.1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
*hFE Rank classification
Rank
Q
P
hFE 500 to 1200 800 to 2000
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
150 V
500 2000
1V
25 MHz
1


Panasonic Electronic Components Datasheet

D1272 Datasheet

2SD1272

No Preview Available !

D1272 pdf
Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
0.5
TC=25˚C
IB=400µA
0.4
350µA
300µA
0.3
250µA
200µA
0.2 150µA
100µA
0.1
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1272
VCE(sat) — IC
IC/IB=25
10
3 TC=100˚C
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
VBE(sat) — IC
IC/IB=25
10
3
TC=100˚C
25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
hFE — IC
10000
3000
1000
TC=100˚C
25˚C
–25˚C
300
100
VCE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=4V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
3 ICP
1 IC
10ms
t=1ms
0.3 DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
102 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Part Number D1272
Description 2SD1272
Maker Panasonic Semiconductor
Total Page 2 Pages
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