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Panasonic Electronic Components Datasheet

2SD958 Datasheet

Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

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2SD958 pdf
Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB788
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
120
120
7
50
20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = 50V, IE = 0
100 nA
VCE = 50V, IB = 0
1 µA
IC = 10µA, IE = 0
120
V
IC = 1mA, IB = 0
120
V
IE = 10µA, IC = 0
7
V
VCE = 5V, IC = 2mA
180 700
IC = 20mA, IB = 2mA
0.6 V
VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
VCE = 40V, IC = 2mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1


Panasonic Electronic Components Datasheet

2SD958 Datasheet

Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

No Preview Available !

2SD958 pdf
Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
hFE — IC
600
VCE=5V
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — IC
160
VCE=10V
140
GV=80dB
Function=FLAT
Ta=25˚C
120
100
80 Rg=100k
60
22k
40
4.7k
20
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
IC — VCE
24
Ta=25˚C
IB=50µA
20 45µA
40µA
16
35µA
30µA
12
25µA
20µA
8
15µA
4 10µA
5µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
fT — IE
800
VCB=5V
Ta=25˚C
700
600
500
400
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2SD958
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C Ta=75˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
8
IE=0
7 f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1
3
10 30
100
Collector to base voltage VCB (V)
2


Part Number 2SD958
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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