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Panasonic Electronic Components Datasheet

2SD662B Datasheet

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

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2SD662B pdf
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
s Features
q High collector to emitter voltage VCEO.
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD662
base voltage 2SD662B
Collector to 2SD662
emitter voltage 2SD662B
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
250
400
200
400
5
100
70
600
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter 2SD662
voltage
2SD662B
ICEO
VCEO
VCE = 100V, IB = 0
IC = 100µA, IB = 0
2 µA
200
V
400
Emitter to base voltage
Forward current
2SD662
transfer ratio
2SD662B
VEBO
hFE*
IE = 10µA, IC = 0
VCE = 10V, IC = 5mA
5V
30 220
30 150
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
50
1.2 V
80 MHz
5 10 pF
*hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1


Panasonic Electronic Components Datasheet

2SD662B Datasheet

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

No Preview Available !

2SD662B pdf
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
IC — IB
120
VCE=10V
Ta=25˚C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base current IB (mA)
hFE — IC
360
VCE=10V
300
240
Ta=75˚C
180
25˚C
120
–25˚C
60
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (mA)
IC — VCE
120
Ta=25˚C
100
1.8mA
1.6mA
1.4mA
IB=2.0mA
1.2mA
1.0mA
0.8mA
80
60 0.6mA
0.4mA
40
0.2mA
20
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3 25˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (mA)
fT — IE
160
VCB=10V
Ta=25˚C
140
120
100
80
60
40
20
0
–1 –3 –10 –30 –100
Emitter current IE (mA)
2SD662, 2SD662B
IC — VBE
120
VCE=10V
25˚C
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
IB — VBE
3.0
VCE=10V
Ta=25˚C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
ICBO — Ta
104
VCB=250V
103
102
10
1
0 40 80 120 160 200
Ambient temperature Ta (˚C)
2


Part Number 2SD662B
Description Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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2SD662B pdf
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