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2SD2530 Datasheet

Silicon NPN triple diffusion planer type Darlington(For power amplification)

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2SD2530 pdf
Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
For power amplification
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
I Features
High forward current transfer ratio hFE
Allowing supply with the radial taping
Low collector to emitter saturation voltage VCE(sat): < 2.5 V
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
100
100
5
10
5
15
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.2±0.1
1.48±0.2
0.65±0.1
0.35±0.1
2.5±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
123
C 1.0
2.25±0.2
0.55±0.1
1: Base
2: Collector
3: Emitter
MT-4 Package
Internal Connection
B
C
E
I Electrical Characteristics TC = 25°C ± 2°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 100 V, IE = 0
VCE = 80 V, IB = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 4 V, IC = 2 A
VCE = 4 V, IC = 4 A
IC = 2 A, IB = 2 mA
IC = 4 A, IB = 16 mA
IC = 4 A, IB = 16 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 4 A, IB1 = 16 mA, IB2 = −16 mA
VCC = 50 V
Min
100
2 000
500
Typ Max
100
100
5
15 000
1.5
2.5
2.5
20
0.27
2.9
1.0
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1


Part Number 2SD2530
Description Silicon NPN triple diffusion planer type Darlington(For power amplification)
Maker Panasonic Semiconductor
Total Page 1 Pages
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