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Panasonic Electronic Components Datasheet

2SD2276 Datasheet

Silicon PNP epitaxial planar type Darlington(For power amplification)

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2SD2276 pdf
Power Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1503
s Features
q Optimum for 110W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
160
140
5
15
8
120
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
min
140
2000
5000
typ max Unit
100 µA
100 µA
100 µA
V
30000
2.5 V
3.0 V
20 MHz
2.0 µs
6.0 µs
1.2 µs
*hFE2 Rank classification
Rank
Q
S
P
hFE2 5000 to 15000 7000 to 21000 8000 to 30000
1


Panasonic Electronic Components Datasheet

2SD2276 Datasheet

Silicon PNP epitaxial planar type Darlington(For power amplification)

No Preview Available !

2SD2276 pdf
Power Transistors
200
150
(1)
100
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
50
(2) (3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
3 TC=100˚C
25˚C
–25˚C
1
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
100
30
10
tstg
3
ton
1 tf
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2)
VCC=50V
TC=25˚C
0.3
0.1
0.03
0.01
0
4 8 12 16
Collector current IC (A)
IC — VCE
12
IB=2mA
TC=25˚C
10
1mA
0.9mA
8 0.8mA
0.7mA
6 0.6mA
0.5mA
4 0.4mA
0.3mA
2
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2276
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1 100˚C
25˚C
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
100000
hFE — IC
30000
10000
3000
TC=100˚C
1000
300 25˚C
100 –25˚C
VCE=5V
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1
3
10 30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
30
ICP
10 IC
Non repetitive pulse
TC=25˚C
10ms
t=1ms
3 DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD2276
Description Silicon PNP epitaxial planar type Darlington(For power amplification)
Maker Panasonic Semiconductor
Total Page 3 Pages
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