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Panasonic Electronic Components Datasheet

2SD2018 Datasheet

Silicon NPN epitaxial planar type darlington

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2SD2018 pdf
Power Transistors
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Features
High forward current transfer ratio hFE
Built-in 60 V Zener diode between base to collector
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
PC
Rating
60
+25
10
60
+25
10
5
1
1.5
1.2
dissipation
5.0
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *: With a 100 mm × 100 mm × 2 mm Al heat sick.
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1 1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
B
R1 R2 E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
VCBO
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1.0 A
IC = 1.0 A, IB = 1.0 mA
IC = 1.0 A, IB = 1.0 mA
50
50
6 500
85
85
1
2
40 000
1.8
2.2
V
V
µA
mA
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: May 2003
SJD00239BED
1


Panasonic Electronic Components Datasheet

2SD2018 Datasheet

Silicon NPN epitaxial planar type darlington

No Preview Available !

2SD2018 pdf
2SD2018
PC Ta
6 (1) With a 100 × 100 × 2 mm
Al heat sink
(2) Without heat sink
5
4
3
(1)
2
(2)
1
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
2.4
VCE = 10 V
TC = 25°C
2.0
90 µA
1.6 80 µA
70 µA
1.2 60 µA
0.8
IB = 100 µA
50 µA
40 µA
0.4 30 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
1 000
100
VCE(sat) IC
IC / IB = 1 000
10
TC = 100°C
1
25°C
25°C
0.1
0.01
0.1 1
Collector current IC (A)
10
1 000
100
VBE(sat) IC
IC / IB = 1 000
10
TC = −25°C
1
25°C
100°C
0.1
0.01
0.1 1
Collector current IC (A)
10
hFE IC
106 VCE = 10 V
105
TC = 100°C
25°C
104 25°C
103
102
0.01
0.1 1
Collector current IC (A)
10
Cob VCB
24 IE = 0
f = 1 MHz
TC = 25°C
20
16
12
8
4
0
1 10 100
Collector-base voltage VCB (V)
2 SJD00239BED


Part Number 2SD2018
Description Silicon NPN epitaxial planar type darlington
Maker Panasonic Semiconductor
Total Page 3 Pages
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2SD2018 pdf
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