| Description | Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington 4.2±0.2 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 For power amplification and switching Complementary to 2SD1275 and 2SD1275A • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16... |
| Features |
φ 3.1±0.1
Solder Dip (4.0)
14.0±0.5
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter volt... |
| Datasheet |
 2SB949A Datasheet - 93.98KB |
