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Panasonic Electronic Components Datasheet

2SB0873 Datasheet

Silicon PNP epitaxial planar type

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2SB0873 pdf
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Transistors
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
Features
Low collector-emitter saturation voltage VCE(sat)
Large collector current IC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
30
20
7
5
10
1
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
Symbol
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Conditions
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = −2 A
IC = −3 A, IB = − 0.1 A
VCB = −6 V, IE = 50 mA, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min
20
7
90
Typ Max
100
100
625
1
120
85
Unit
V
V
nA
nA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE
90 to 135
120 to 205 180 to 625
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00061BED
1


Panasonic Electronic Components Datasheet

2SB0873 Datasheet

Silicon PNP epitaxial planar type

No Preview Available !

2SB0873 pdf
2SB0873
PC Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
6
Ta = 25°C
IB = −40 mA 35 mA
5 30 mA
25 mA
4 20 mA
15 mA
3
10 mA
2
5 mA
1
1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
12
VCE = −2 V
25°C
10
Ta = 75°C 25°C
8
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
100
10
VCE(sat) IC
IC / IB = 30
1
0.1
Ta = 75°C
25°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
600
VCE = −2 V
Ta = 75°C
500
25°C
400
25°C
300
200
100
0
0.01
0.1
1
Collector current IC (A)
10
fT IE
240
VCB = −6 V
Ta = 25°C
200
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
200
IE = 0
f = 1 MHz
Ta = 25°C
160
120
80
40
Safe operation area
100
Single pulse
Ta = 25°C
10 ICP
IC
1
t = 10 ms
t=1s
0.1
0
1 10 100
Collector-base voltage VCB (V)
0.01
0.1
1
10 100
Collector-emitter voltage VCE (V)
2 SJC00061BED


Part Number 2SB0873
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor
Total Page 3 Pages
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