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Panasonic Electronic Components Datasheet

2SA879 Datasheet

Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

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2SA879 pdf
Transistor
2SA879
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1573
s Features
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*
VCB = –12V, IB = 0
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
60
–2 µA
V
V
220
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
50
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
5 10 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
R
100 ~ 220
1


Panasonic Electronic Components Datasheet

2SA879 Datasheet

Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

No Preview Available !

2SA879 pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IB — VBE
–2.4
–2.0
VCE=–10V
Ta=25˚C
–1.6
–1.2
– 0.8
– 0.4
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
hFE — IC
300
VCE=–10V
250
200
Ta=75˚C
150
25˚C
100 –25˚C
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
–120
–100
–80
–60
–40
–20
IC — VCE
Ta=25˚C
IB=–2mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA879
–120
–100
IC — IB
VCE=–10V
Ta=25˚C
–80
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –2.4
Base current IB (mA)
–120
–100
IC — VBE
25˚C
Ta=75˚C
–25˚C
VCE=–10V
–80
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
160
VCB=–10V
140 f=100MHz
Ta=25˚C
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
Ta=75˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
16
f=1MHz
14 IE=0
Ta=25˚C
12
10
8
6
4
2
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2


Part Number 2SA879
Description Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
Maker Panasonic Semiconductor
Total Page 3 Pages
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