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Panasonic Electronic Components Datasheet

2SA838 Datasheet

Silicon PNP epitaxial planer type Transistor

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2SA838 pdf
Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
s Features
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–30
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
ICBO
ICEO
IEBO
hFE*
VCE(sat)
VBE
fT
NF
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Zrb
Cre
VCB = –10V, IE = 0
VCE = –20V, IB = 0
– 0.1
–100
µA
VEB = –5V, IC = 0
–10 µA
VCE = –10V, IC = –1mA
70 220
IC = –10mA, IB = –1mA
– 0.1
V
VCE = –10V, IC = –1mA
– 0.7
V
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
VCB = –10V, IE = 1mA, f = 5MHz
2.8 4.0 dB
VCE = –10V, IC = –1mA, f = 2MHz
22 50
VCE = –10V, IC = –1mA,
f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1


Panasonic Electronic Components Datasheet

2SA838 Datasheet

Silicon PNP epitaxial planer type Transistor

No Preview Available !

2SA838 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
–120
–100
–80
–60
hFE — IC
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–40
–20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
600
VCB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
IC — VCE
–30
Ta=25˚C
–25
–20 IB=–250µA
–200µA
–15
–150µA
–10 –100µA
–5 –50µA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA838
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
Ta=75˚C
25˚C
– 0.1
– 0.03
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
PG — IC
24
VCE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cre — VCE
5
IC=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1 –3
–10 –30 –100
Collector to emitter voltage VCE (V)
NF — IE
5
VCB=–10V
f=100MHz
Ta=25˚C
4
3
2
1
0
0.1 0.3 1 3 10
Emitter current IE (mA)
2


Part Number 2SA838
Description Silicon PNP epitaxial planer type Transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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