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Panasonic Electronic Components Datasheet

2SA1123 Datasheet

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

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2SA1123 pdf
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–150
–5
–100
–50
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
ICBO
VCEO
VEBO
hFE*
VCE(sat)
VCB = –100V, IE = 0
IC = –0.1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
–150
–5
130
–1 µA
V
V
450
–1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance
Noise voltage
Cob
NV
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
5 pF
150 300 mV
*hFE Rank classification
Rank
R
hFE 130 ~ 220
S
185 ~ 330
T
260 ~ 450
1


Panasonic Electronic Components Datasheet

2SA1123 Datasheet

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

No Preview Available !

2SA1123 pdf
Transistor
PC — Ta
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–80
Ta=25˚C
–70
–60
IB=–500µA
–450µA
–400µA
–350µA
–50 –300µA
–250µA
–40 –200µA
–30 –150µA
–100µA
–20
–50µA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1123
–120
–100
–80
IC — VBE
VCE=–5V
25˚C
Ta=75˚C –25˚C
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
400
Ta=75˚C
300
25˚C
200 –25˚C
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
300
VCB=–10V
Ta=25˚C
250
200
150
100
50
0
1
3
10 30
100
Emitter current IE (mA)
2


Part Number 2SA1123
Description Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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