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Panasonic Electronic Components Datasheet

2SA1096 Datasheet

Silicon NPN epitaxial planar type(For low-frequency power amplification)

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2SA1096 pdf
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
8.0+00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Features
High collector to emitter voltage VCEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to
emitter voltage
2SC2497
2SC2497A
VCBO
VCEO
70
50
60
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
VEBO
ICP
IC
PC
5
3
1.5
1.2 *1
5 *2
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1 : Emitter
123
2 : Collector
3 : Base
TO-126B-A1 Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SC2497
2SC2497A
ICBO
ICEO
IEBO
VCBO
VCEO
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
VCE(sat)
VBE(sat)
fT
Cob
VCE = 5 V, IC = 1 A
IC = 1.5 A, IB = 0.15 A
IC = 1.5 A, IB = 0.15 A
VCB = 5 V, IE = 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Note) *: Rank classification
Rank
R
S
hFE 80 to 160 120 to 220
Min
70
50
60
80
Typ Max
1
100
10
220
1
1.5
150
35
Unit
µA
µA
µA
V
V
V
V
MHz
pF
188


Panasonic Electronic Components Datasheet

2SA1096 Datasheet

Silicon NPN epitaxial planar type(For low-frequency power amplification)

No Preview Available !

2SA1096 pdf
Power Transistors
2SC2497, 2SC2497A
PC Ta
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
1 (2)
0
0 40 80 120 160
Ambient temperature Ta (˚C)
IC VCE
4.0
TC=25˚C
3.5
3.0 IB=50mA
45mA
2.5 40mA
35mA
2.0 30mA
25mA
1.5 20mA
15mA
1.0
10mA
0.5 5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) IC
IC/IB=10
10
3
1
0.3 TC=100˚C
25˚C
0.1
25˚C
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
VBE(sat) IC
IC/IB=10
10
3
1 TC=25˚C
100˚C
0.3
25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
1000
hFE IC
VCE=5V
300
TC=100˚C
100
25˚C
30 25˚C
10
3
1
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
fT IE
240
VCB=5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
0.01 0.03 0.1 0.3 1 3
Emitter current IE (A)
10
Cob VCB
240
IE=0
f=1MHz
TC=25˚C
200
160
120
80
40
0
1 3 10 30 100
Collector to base voltage VCB (V)
VCER RBE
100 IC=10mA
90 TC=25˚C
80
70
60
50
40
30
20
10
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (k)
ICBO Ta
104
VCB=40V
103
102
10
1
0 20 40 60 80 100 120 140 160 180
Ambient temperature Ta (˚C)
189


Part Number 2SA1096
Description Silicon NPN epitaxial planar type(For low-frequency power amplification)
Maker Panasonic Semiconductor
Total Page 4 Pages
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