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Panasonic Electronic Components Datasheet

2SA1022 Datasheet

Silicon PNP epitaxial planer type

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2SA1022 pdf
Transistor
2SA1022
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2295
s Features
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
ICEO
IEBO
hFE*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
– 0.1 µA
–100 µA
–10 µA
70 220
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1
V
Base to emitter voltage
VBE VCE = –10V, IC = –1mA
– 0.7
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
2.8 dB
22
Common emitter reverse transfer
capacitance
Cre
VCE = –10V, IC = –1mA
f = 10.7MHz
1.2 pF
*hFE Rank classification
Rank
B
hFE
Marking Symbol
70 ~ 140
EB
C
110 ~ 220
EC
1


Panasonic Electronic Components Datasheet

2SA1022 Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

2SA1022 pdf
Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
hFE — IC
120
VCE=–10V
100
Ta=75˚C
80
25˚C
60 –25˚C
40
20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
600
VCB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
IC — VCE
–30
Ta=25˚C
–25
–20 IB=–250µA
–200µA
–15
–150µA
–10 –100µA
–5 –50µA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1022
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
PG — IC
24
VCE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cre — VCE
5
IC=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1 –3
–10 –30 –100
Collector to emitter voltage VCE (V)
NF — IE
5
VCB=–10V
f=100MHz
Ta=25˚C
4
3
2
1
0
0.1 0.3 1 3 10
Emitter current IE (mA)
2


Part Number 2SA1022
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 2 Pages
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