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Panasonic Electronic Components Datasheet

FK330301 Datasheet

Silicon N-channel MOS FET

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FK330301 pdf
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330301
Silicon N-channel MOS FET
For switching circuits
Overview
FK330301 is N-channel small signal MOS FET employed small size surface
mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V)
Small size surface mounting package: SSSMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating
30
±12
100
200
100
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbo: X1
Internal Connection
(D)
3
12
(G) (S)
Publication date: January 2011
Ver. DED
1


Panasonic Electronic Components Datasheet

FK330301 Datasheet

Silicon N-channel MOS FET

No Preview Available !

FK330301 pdf
FK330301
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1.0 mA, VGS = 0
30
Drain-source cutoff current
IDSS VDS = 30 V, VGS = 0
1.0
Gate-source cutoff current
IGSS VGS = ±10 V, VDS = 0
±10
Gate threshold voltage
Drain-source ON resistance
VTH
RDS(on)
ID = 1.0 mA, VDS = 3.0 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
0.5 1.0 1.5
36
23
Forward transfer admittance
YfsID = 10 mA, VDS = 3.0 V
20 55
Short-circuit input capacitance (Common source) Ciss
12
Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz
7
Reverse transfer capacitance (Common source)
Crss
3
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
RL = 300 W
100
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
RL = 300 W
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VGS = 0 V to 3 V
VIN
50
G
VDD = 3 V
ID = 10 mA
RL = 300
D VOUT
VIN
VOUT
S
90%
10%
10%
90%
ton toff
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
2 Ver. DED


Part Number FK330301
Description Silicon N-channel MOS FET
Maker Panasonic
Total Page 5 Pages
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