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Panasonic Electronic Components Datasheet

D1323 Datasheet

Power Transistors

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D1323 pdf
Power Transistors
2SD1323
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
s Features
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
q Incorporating a zener diode of 30V zener voltage between col-
lector and base
q Minimized variation in the breakdown voltage
q Large energy handling capability
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
30±5
30±5
5
8
4
40
2
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 25V, IE = 0
VEB = 5V, IC = 0
100 µA
2 mA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
hFE2*1
IC = 5mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
25
1000
2000
35 V
10000
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, IB = 12mA
2.5
V
4
2.5 V
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
fT
ton
tstg
tf
Es/b*2
VCE = 10V, IC = 0.5A, f = 1MHz
20
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 20V
0.3
3
1
IC = 2A, L = 100mH, RBE = 100
200
MHz
µs
µs
µs
mJ
*1hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
*2Es/b Test circuit
60Hz mercury relay
X
L
120RBE
6V
1
Y
G
1


Panasonic Electronic Components Datasheet

D1323 Datasheet

Power Transistors

No Preview Available !

D1323 pdf
Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=250
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
1000
300
Non repetitive pulse
TC=25˚C
100
30
10 ICP
3 IC
1
t=10ms
1ms
DC
0.3
0.1
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
IC — VCE
6
TC=25˚C
5 IB=2.0mA
1.8mA
1.6mA
4
1.4mA
1.2mA
1.0mA
0.8mA
3 0.6mA
0.4mA
2
0.2mA
1
0
012345
Collector to emitter voltage VCE (V)
2SD1323
VCE(sat) — IC
100
IC/IB=250
30
10
TC=100˚C
3 25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
105
VCE=3V
104 TC=100˚C
25˚C
103 –25˚C
102
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
IC — Lcoil
RBE=100
TC=25˚C
30
10
200mJ
3
1
0.3
0.1
1 3 10 30 100 300 1000
Load inductance Lcoil (mH)
2


Part Number D1323
Description Power Transistors
Maker Panasonic
Total Page 2 Pages
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