Description | Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching 7.0±0.3 Unit: mm 3.5±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.0±0... |
Features |
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.0±0.2 2.0±0.2 0˚ to 0.15˚ 2.5±0.2 12.6±0.3 7.2±0.3 (1.0) (1.0) 1.1±0.... |
Datasheet | 2SB1174 Datasheet - 103.16KB |