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Panasonic Electronic Components Datasheet

2SA2075 Datasheet

Silicon PNP epitaxial planar type Power Transistors

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2SA2075 pdf
Power Transistors
2SA2075
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
Features
High-speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
Allowing supply with the radial taping (MT-4)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
6
3
5
15
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: A2075
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open) ICBO VCB = −80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −80 V, IB = 0
100 µA
Forward current transfer ratio
hFE1 VCE = −4 V, IC = −1 A
80 250
hFE2 VCE = −4 V, IC = −3 A
30
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = −375 mA
1.0 V
Transition frequency
fT VCE = 10 V, IC = − 0.1 A, f = 10 MHz 100 MHz
Turn-on time
ton IC = −1 A, Resistance loaded
0.2 µs
Storage time
tstg IB1 = − 0.1 A, IB2 = 0.1 A
0.7 µs
Fall time
tf VCC = −50 V
0.1 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJD00294AED
1


Panasonic Electronic Components Datasheet

2SA2075 Datasheet

Silicon PNP epitaxial planar type Power Transistors

No Preview Available !

2SA2075 pdf
2SA2075
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
20
(1)
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
100
Non repetitive pulse
TC = 25˚C
10
ICP
IC
1 10 ms
0.1
t = 1 ms
t=1s
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
1 000 Without heat sink
100
Rth t
Ta = 25°C
10
1
0.1
0.001
0.01
0.1 1 10
Time t (s)
100 1 000
2 SJD00294AED


Part Number 2SA2075
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic
Total Page 3 Pages
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