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2SA1487 Datasheet

SILICON PNP EPITAXIAL PLANER TYPE

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2SA1487 pdf
Transistor
2SA1487
Silicon PNP epitaxial planer type
For video amplifier
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–85
–85
–4
–100
–50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICEO
VCBO
VCE = –60V, IB = 0
IC = –100µA, IE = 0
–10 µA
–85 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = 1mA, IB = 0
IE = –100µA, IC = 0
–85
–4
V
V
Forward current transfer ratio
hFE
VCE = –5V, IC = –10mA
60
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.5
V
Transition frequency
fT VCB = –5V, IE = 10mA, f = 200MHz 500 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7 pF
1
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Panasonic Electronic Components Datasheet

2SA1487 Datasheet

SILICON PNP EPITAXIAL PLANER TYPE

No Preview Available !

2SA1487 pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
Ta=75˚C
25˚C
– 0.1
– 0.03
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
60
Ta=25˚C
50 IB=–500µA
–450µA
–400µA
40
–350µA
–300µA
30
–250µA
20 –200µA
–150µA
10 –100µA
–50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SA1487
–120
–100
–80
IC — VBE
VCE=–5V
25˚C
Ta=75˚C
–25˚C
–60
–40
–20
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
hFE — IC
240
VCE=–5V
200
160
120
Ta=75˚C
25˚C
80
–25˚C
40
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
1200
1000
fT — IE
VCB=–5V
f=200MHz
Ta=25˚C
800
600
400
200
0
1
3
10 30
100
Emitter current IE (mA)
2
Free Datasheet http://www.datasheet4u.com/


Part Number 2SA1487
Description SILICON PNP EPITAXIAL PLANER TYPE
Maker Panasonic
Total Page 3 Pages
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