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Panasonic Electronic Components Datasheet

2SA0777 Datasheet

Silicon PNP epitaxial planar type Transistors

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2SA0777 pdf
Transistors
2SA0777 (2SA777)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1509
Features
High collector-emitter voltage (Base open) VCEO
Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
5
0.5
1
1
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
80
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
80
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
0.1
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
90
220
hFE2 VCE = −5 V, IC = −500 mA
50 100
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
0.2 0.4
Base-emitter saturation voltage
VBE(sat) IC = −500 mA, IB = −50 mA
0.85 1.2
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
120
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
11 20
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Palse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00004BED
1



Panasonic Electronic Components Datasheet

2SA0777 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0777 pdf
2SA0777
PC Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
1.2
1.0
0.8
0.6
0.4
0.2
IC VCE
Ta = 25°C
IB = −10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC IB
1.2
VCE = −10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Base current IB (mA)
10
1
0.1
0.01
VCE(sat) IC
IC / IB = 10
25°C
Ta = 75°C
25°C
100
10
1
0.1
VBE(sat) IC
IC / IB = 10
25°C
Ta = −25°C
75°C
0.001
1
10
100
1 000
Collector current IC (mA)
0.01
1
10
100
1 000
Collector current IC (mA)
hFE IC
300
VCE = −10 V
250
200 Ta = 75°C
25°C
150
25°C
100
50
0
1
10
100
1 000
Collector current IC (mA)
200
180
160
140
120
100
80
60
40
20
0
1
fT IE
VCB = −10 V
Ta = 25°C
10
Emitter current IE (mA)
100
Cob VCB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
ICBO Ta
104 VCB = −20 V
103
102
10
1
0 20 40 60 80 100 120 140 160 180
Ambient temperature Ta (°C)
2 SJC00004BED



Panasonic Electronic Components Datasheet

2SA0777 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0777 pdf
ICEO Ta
105 VCE = −10 V
104
103
102
10
1
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
Safe operation area
10 Single pulse
Ta = 25°C
1
ICP
IC
t = 10 ms
t=1s
0.1
0.01
0.001
0.1
1
10 100
Collector-emitter voltage VCE (V)
2SA0777
SJC00004BED
3




Part Number 2SA0777
Description Silicon PNP epitaxial planar type Transistors
Maker Panasonic
Total Page 4 Pages
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