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Panasonic Electronic Components Datasheet

2SA0720A Datasheet

Silicon PNP epitaxial planer type Transistor

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2SA0720A pdf
Transistor
2SA0720A (2SA720A)
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
I Features
G High collector to emitter voltage VCEO.
G Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–80
–70
–5
–1
– 0.5
625
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
I Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 100MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
min typ max Unit
– 0.1 µA
–80 V
–70 V
–5 V
85 240
40
– 0.2 – 0.6
V
– 0.85 –1.5
V
120 MHz
20 30 pF
*2 Pulse measurement
Note.) The Part number in the Parenthesis shows conventional part number.
1


Panasonic Electronic Components Datasheet

2SA0720A Datasheet

Silicon PNP epitaxial planer type Transistor

No Preview Available !

2SA0720A pdf
Transistor
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
1.2
1.0
0.8
0.6
0.4
0.2
IC VCE
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SA0720A
IC IB
1.2
1.0
VCE=10V
Ta=25˚C
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Base current IB (mA)
VCE(sat) IC
10
IC/IB=10
3
1
0.3
0.1
0.03
0.01
25˚C
Ta=75˚C
25˚C
0.003
0.001
1 3 10 30 100 300 1000
Collector current IC (mA)
fT IE
200 VCB=10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA)
100
30
10
VBE(sat) IC
IC/IB=10
3
1
0.3
0.1
Ta=25˚C
25˚C
75˚C
0.03
0.01
1
3 10 30 100 300 1000
Collector current IC (A)
Cob VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
1 3 10 30 100
Collector to base voltage VCB (V)
hFE IC
300
VCE=10V
250
200 Ta=75˚C
25˚C
150
25˚C
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
ICBO Ta
104
VCB=20V
103
102
10
1
0 60 120 180
Ambient temperature Ta (˚C)
2


Part Number 2SA0720A
Description Silicon PNP epitaxial planer type Transistor
Maker Panasonic
Total Page 3 Pages
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