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Panasonic Electronic Components Datasheet

2SA0719 Datasheet

Silicon PNP epitaxial planar type Transistors

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2SA0719 pdf
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0719
Silicon PNP epitaxial planar type
For low-frequency power amplication and driver amplication
Complementary to 2SC1317
Features
Complementary pair with 2SC1317
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
–30
–25
–5
–500
–1
625
150
–55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
VCBO IC = –10 mA, IE = 0
–30
Collector-emitter voltage (Base open)
VCEO IC = –10 mA, IB = 0
–25
Emitter-base voltage (Collector open)
VEBO IE = –10 mA, IC = 0
–5
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0
Forward current transfer ratio
hFE1 *
hFE2
VCE = –10 V, IC = –150 mA
VCE = –10 V, IC = –500 mA
85
40
Collector-emitter saturation voltage
VCE(sat) IC = –300 mA, IB = –30 mA
– 0.35
Base-emitter saturation voltage
VBE(sat) IC = –300 mA, IB = –30 mA
–1.1
Transition frequency
fT VCB = –10 V, IE = 50 mA, f = 200 MHz
200
Collector output capacitance
(Common base, input open circuited)
Cre VCB = –10 V, IE = 0, f = 1 MHz
6
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank
QRS
hFE1
85 to 170
120 to 240
170 to 340
Max
– 0.1
340
– 0.60
–1.5
15
Unit
V
V
V
mA
V
V
MHz
pF
Publication date : October 2008
SJC00002DED
1



Panasonic Electronic Components Datasheet

2SA0719 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0719 pdf
2SA0719
This product complies with the RoHS Directive (EU 2002/95/EC).
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
1200
1000
IC VCE
Ta = 25°C
800
600
400
200
IB = −1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
800
700
600
500
400
300
200
100
0
0
IC IB
VCE = −10 V
Ta = 25°C
2 4 6 8
Base current IB (mA)
10
10
1
0.1
0.01
VCE(sat) IC
IC / IB = 10
25°C
Ta = 75°C
25°C
100
10
1
0.1
VBE(sat) IC
IC / IB = 10
25°C
Ta = −25°C
75°C
0.001
1
10
100
1000
Collector current IC (mA)
0.01
1
10
100
1000
Collector current IC (mA)
hFE IC
600
VCE = −10 V
500
400
300
Ta = 75°C
200 25°C
25°C
100
0
0.01
0.1
1
Collector current IC (A)
10
fT IE
240
VCB = −10 V
Ta = 25°C
200
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
40 Ta = 25°C
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
120
100
VCER RBE
IC = −2 mA
Ta = 25°C
80
60
40
20
0
1 10 100 1000
Base-emitter resistance RBE (k)
2 SJC00002DED



Panasonic Electronic Components Datasheet

2SA0719 Datasheet

Silicon PNP epitaxial planar type Transistors

No Preview Available !

2SA0719 pdf
This product complies with the RoHS Directive (EU 2002/95/EC).
ICEO Ta
Safe operation area
104
VCE = −10 V
10
Single pulse
Ta = 25°C
103
1
ICP t = 10 ms
IC
t=1s
102 0.1
10 0.01
1
0 40 80 120 160 200
Ambient temperature Ta (°C)
0.001
0.1
1
10 100
Collector-emitter voltage VCE (V)
2SA0719
SJC00002DED
3




Part Number 2SA0719
Description Silicon PNP epitaxial planar type Transistors
Maker Panasonic
Total Page 5 Pages
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