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F0118G Datasheet Preview

F0118G Datasheet

GaAs Infrared Emitting Diode

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F0118G pdf
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power)
GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
F 0118G
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
• Typ. Gesamtleistung: 24 mW @ 100 mA im
TOPLED® Gehäuse
Chipgröße 300 x 300 µm2
Emissionswellenlänge: 950 nm
GaAs-LED mit sehr hohem Wirkungsgrad
Gute Linearität (Ie = f [IF]) bei hohen Strömen
Gleichstrom- oder Impulsbetrieb möglich
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Anwendungen
IIR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
Lichtschranken bis 500 kHz
Sensorik
Features
Typ. total radiant power: 24 mW @ 100 mA in
TOPLED® package.
Chip size 300 x 300 µm2
Peak wavelength: 950 nm
Very highly efficient GaAs LED
Good linearity (Ie = f [IF]) at high currents
DC or pulsed operations are possible
High reliability
High pulse handling capability
Applications
IR remote control for hifi and TV sets, video
tape recorder, dimmers
Remote control for steady and varying
intensity
Light-reflection switches (max. 500 kHz)
Sensor technology
Typ
Type
F 0118G
Bestellnummer
Ordering Code
Q65110A0136
Beschreibung
Description
Infrarot emittierender Chip, Oberseite Anodenanschluß,
Infrared emitting die, top side anode connection
2003-04-10
1



OSRAM
OSRAM

F0118G Datasheet Preview

F0118G Datasheet

GaAs Infrared Emitting Diode

No Preview Available !

F0118G pdf
F 0118G
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value2)
Einheit
Unit
min. typ.
max.
Emissionswellenlänge
Peak wavelength
IF = 10 mA
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50
Sperrspannung
Reverse voltage
IR = 1µA
Durchlaβspannung
Forward voltage
IF = 100 mA
Strahlungsleistung
Radiant Power3)
IF = 100 mA
Photostrom (Spezifikationsparameter Helligkeit)
Photocurrent (specified parameter brightness)
IF = 100 mA
λpeak
∆λ
tr, tf
VR
VF
Φe
Ie
950
55
0.5/0.4
5
1.4 1.6
12
0.65
nm
nm
µs
V
V
mW
a.u.
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per
2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample
fails in that measurement, an area of 0,5 cm² around each failed sample is marked by pen. All el. values are referenced
to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
2003-04-10
2


Part Number F0118G
Description GaAs Infrared Emitting Diode
Maker OSRAM
Total Page 6 Pages
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