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  ON Semiconductor Electronic Components Datasheet  

SBCW33LT1G Datasheet

General Purpose Transistor

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SBCW33LT1G pdf
BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
32 Vdc
32 Vdc
5.0 Vdc
100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2),
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 6
1
www.onsemi.com
SOT−23
(TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
D3 M G
G
D3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BCW33LT1G
SOT−23 3,000/Tape & Reel
(Pb−Free)
SBCW33LT1G SOT−23 3,000/Tape & Reel
(Pb−Free)
BCW33LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCW33LT1/D


  ON Semiconductor Electronic Components Datasheet  

SBCW33LT1G Datasheet

General Purpose Transistor

No Preview Available !

SBCW33LT1G pdf
BCW33LT1G, SBCW33LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CBO
32
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
V(BR)EBO
ICBO
5.0
Vdc
100 nAdc
10 mAdc
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
420 800
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(on)
0.55
0.25
0.70
Vdc
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
4.0
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF dB
− 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
10 k
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
0
t1
CS < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−Off Time
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2


Part Number SBCW33LT1G
Description General Purpose Transistor
Maker ON Semiconductor
Total Page 6 Pages
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