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  ON Semiconductor Electronic Components Datasheet  

NSCT817-40LT3G Datasheet

General Purpose Transistors

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NSCT817-40LT3G pdf
NSCT817−25LT1G,
NSCT817−40LT1G
General Purpose Transistors
NPN Silicon
Features
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = Specific Device Code
(725 for −25 device)
(74L for −40 device)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSCT817−25LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
NSCT817−40LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
NSCT817−25LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
NSCT817−40LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
1
Publication Order Number:
NSCT817−25LT1/D


  ON Semiconductor Electronic Components Datasheet  

NSCT817-40LT3G Datasheet

General Purpose Transistors

No Preview Available !

NSCT817-40LT3G pdf
NSCT817−25LT1G, NSCT817−40LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
SMALL− SIGNAL CHARACTERISTICS
NSCT817−25
NSCT817−40
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Min Typ Max
45 −
50 −
5.0 −
− − 100
− − 5.0
160 − 400
250 − 600
40 −
− − 0.7
− − 1.2
100 −
− 10
Unit
V
V
V
nA
mA
V
V
MHz
pF
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2


Part Number NSCT817-40LT3G
Description General Purpose Transistors
Maker ON Semiconductor
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