| Description | These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage... |
| Features |
• 48 A, 60 V ♦ RDS(ON) = 0.025 mW @ VGS = 10 V • Critical DC Electrical Parameters Specified at Elevated Temperature • Rugged Internal Source−Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor • 175°C Maximum Junction Temperature Rating • High Density Cell Design for Extremely Low RDS(ON) • TO−220 Package for Both T... |
| Datasheet |
 NDP6060 Datasheet - 254.01KB |
