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  ON Semiconductor Electronic Components Datasheet  

MPSW42 Datasheet

One Watt High Voltage Transistor

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MPSW42 pdf
MPSW42
One Watt High Voltage
Transistor
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation
Derate above 25°C
@
TA
=
25°C
VCEO
VCBO
VEBO
IC
PD
300 Vdc
300 Vdc
6.0 Vdc
500 mAdc
1.0 W
8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
125 °C/W
Thermal Resistance, JunctiontoCase
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
12 3
TO92 1 WATT
(TO226)
CASE 2910
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W42
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 Rev. 7
1
MPSW42 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MPSW42
MPSW42G
MPSW42RLRA
MPSW42RLRAG
TO92
TO92
(PbFree)
TO92
TO92
(PbFree)
5000 Units/Box
5000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSW42/D


  ON Semiconductor Electronic Components Datasheet  

MPSW42 Datasheet

One Watt High Voltage Transistor

No Preview Available !

MPSW42 pdf
MPSW42
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
CollectorEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
BaseEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
300
Vdc
V(BR)CBO
300
Vdc
V(BR)EBO
6.0
Vdc
ICBO
0.1 mAdc
IEBO
0.1 mAdc
hFE
25
40
40
VCE(sat) 0.5 Vdc
VBE(sat) 0.9 Vdc
fT 50 MHz
Ccb 3.0 pF
http://onsemi.com
2


Part Number MPSW42
Description One Watt High Voltage Transistor
Maker ON Semiconductor
Total Page 4 Pages
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MPSW42 pdf
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