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MGSF2P02HD Datasheet

Power MOSFET

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MGSF2P02HD
Power MOSFET
2 Amps, 20 Volts
P−Channel TSOP−6
This device represents a series of Power MOSFETs which are
capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Features
Miniature TSOP−6 Surface Mount Package − Saves Board Space
Low Profile for Thin Applications such as PCMCIA Cards
Very Low RDS(on) Provides Higher Efficiency and Expands
Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Package Mounting Information Provided
http://onsemi.com
VDSS
20 V
RDS(ON) TYP
175 m
ID MAX
2.0 A
P−Channel
1256
3
4
1
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
3V
W
3V = Device Code
W = Work Week
PIN ASSIGNMENT
Drain Drain Source
6 54
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 2
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
MGSF2P02HDT1 TSOP−6 3000 Tape & Reel
MGSF2P02HDT3 TSOP−6 10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
MGSF2P02HD/D


  ON Semiconductor Electronic Components Datasheet  

MGSF2P02HD Datasheet

Power MOSFET

No Preview Available !

MGSF2P02HD pdf
MGSF2P02HD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 M)
Gate−to−Source Voltage
Drain Current − Continuous
Drain Current − Single Pulse (tp 10 ms)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction to Ambient (Note 1.)
VDSS
VDGR
VGS
ID
IDM
PD
PD
RqJA
Drain Current − Continuous
Drain Current − Single Pulse (tp 10 ms)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction to Ambient (Note 2.)
ID
IDM
PD
PD
RqJA
Operating and Storage Temperature Range
Single Pulse Drain Source Avalanche Energy VDD = 20 V, VGS = 4.5 Vpk,
IL = 3.6 Apk, L = 25 mH, RG = 25 W
TJ, Tstg
EAS
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering Purposes, 1/8from Case for 5 seconds
TL
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2square FR−4 Board (1sq. 2 oz. Cu 0.06thick single sided), Operating time 5 seconds.
Value
20
20
±9
1.3
10
400
210
312
2.9
15
2.0
1.0
62.5
− 55 to 150
160
260
Unit
V
V
V
A
mW
mW
°C/W
A
W
W
°C/W
°C
mJ
°C
http://onsemi.com
2


Part Number MGSF2P02HD
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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