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  ON Semiconductor Electronic Components Datasheet  

MBR2090CT Datasheet

Power Rectifiers

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MBR2090CT pdf
MBR2080CT, MBR2090CT,
MBR20100CT
SWITCHMODE
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These stateoftheart devices have the following
features:
Features
20 A Total (10 A Per Diode Leg)
GuardRing for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80100 VOLTS
1
2, 4
3
4
TO220AB
CASE 221A
PLASTIC
1 23
MARKING DIAGRAM
AY WW
B20x0G
AKA
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 0
1
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 8, 9 or 10
G = PbFree Device
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20100CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR2090CT Datasheet

Power Rectifiers

No Preview Available !

MBR2090CT pdf
MBR2080CT, MBR2090CT, MBR20100CT
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating
Symbol 2080CT 2090CT 20100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 133°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
80
90 100
10
20
150
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
IRRM
TJ
Tstg
dv/dt
0.5
*65 to +175
*65 to +175
10,000
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
RqJC
RqJA
2.0
60
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF
0.75
0.85
0.85
0.95
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
6.0
0.1
1.
2.
The heat generated must be less than the thermal conductivity
Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
from
JunctiontoAmbient:
dPD/dTJ
<
1/RqJA.
Unit
V
A
A
A
A
°C
°C
V/ms
°C/W
V
mA
ORDERING INFORMATION
Device
Package
Shipping
MBR2080CT
MBR2080CTG
TO220
TO220
(PbFree)
50 Units / Rail
MBR2090CT
MBR2090CTG
TO220
TO220
(PbFree)
50 Units / Rail
MBR20100CT
MBR20100CTG
TO220
TO220
(PbFree)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MBR2090CT
Description Power Rectifiers
Maker ON Semiconductor
Total Page 4 Pages
PDF Download
MBR2090CT pdf
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