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  ON Semiconductor Electronic Components Datasheet  

J111 Datasheet

(J111 / J112) JFET Chopper Transistors N-Channel

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J111 pdf
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J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain −Gate Voltage
Gate −Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
VDG
VGS
IG
PD
−35 Vdc
−35 Vdc
50 mAdc
350 mW
2.8 mW/°C
Lead Temperature
Operating and Storage Junction
Temperature Range
TL 300
TJ, Tstg −65 to +150
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
TO−92
CASE 29−11
1
2
STYLE 5
3
MARKING DIAGRAM
J11x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
J11x = Device Code
x = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
J111/D


  ON Semiconductor Electronic Components Datasheet  

J111 Datasheet

(J111 / J112) JFET Chopper Transistors N-Channel

No Preview Available !

J111 pdf
J111, J112
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc)
Gate Reverse Current
(VGS = −15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
J111
J112
Drain−Cutoff Current
(VDS = 5.0 Vdc, VGS = −10 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current(1)
(VDS = 15 Vdc)
J111
J112
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
Static Drain−Source On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate On−Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Source Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
J111
J112
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
Min
35
− 3.0
− 1.0
20
5.0
2.0
Max
− 1.0
− 10
− 5.0
1.0
30
50
28
5.0
5.0
Unit
Vdc
nAdc
Vdc
nAdc
mAdc
W
pF
pF
pF
ORDERING INFORMATION
Device
Package
Shipping
J111RL1
J111RL1G
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J111RLRA
J111RLRAG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J111RLRP
J111RLRPG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J112
J112G
TO−92
TO−92
(Pb−Free)
1000 Units / Bulk
J112RL1
J112RL1G
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
J112RLRA
J112RLRAG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number J111
Description (J111 / J112) JFET Chopper Transistors N-Channel
Maker ON Semiconductor
Total Page 5 Pages
PDF Download
J111 pdf
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