| Description | Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operatin... |
| Features |
• Max Junction Temperature 175°C • Avalanche Rated 37 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits DATA SHEET... |
| Datasheet |
 FFSM0865A Datasheet - 392.20KB |
