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  ON Semiconductor Electronic Components Datasheet  

DTC114T Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

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DTC114T pdf
DTC114E SERIES
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
VCBO
VCEO
IC
PD
50 Vdc
50 Vdc
100 mAdc
350 mW
2.81 mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
RθJA
357 °C/W
Operating and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
TL
260 °C
10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
DTC114E
DTC114E
10
10
DTC124E
DTC124E
22
22
DTC144E
DTC144E
47
47
DTC114Y
DTC114Y
10
47
DTC114T
DTC114T
10
DTC143T
DTC143T
4.7
DTD113E DTD113E 1.0 1.0
DTC123E DTC123E 2.2 2.2
DTC143E DTC143E 4.7 4.7
DTC143Z DTC143Z 4.7 47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114E/D


  ON Semiconductor Electronic Components Datasheet  

DTC114T Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

No Preview Available !

DTC114T pdf
DTC114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
ICBO
ICEO
IEBO
— 100 nAdc
— 500 nAdc
— 0.5 mAdc
— 0.2
— 0.1
— 0.2
— 0.9
— 1.9
— 4.3
— 2.3
— 1.5
— 0.18
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
— Vdc
Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO
50
— Vdc
ON CHARACTERISTICS (2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
hFE 35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
350
350
5.0
15
30
200
Collector–Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y
(IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E
(IC = 10 mA, IB = 5 mA) DTC123E
(IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/
(IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
DTC114E
DTC124E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC144E
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
VCE(sat)
VOL
— 0.25 Vdc
Vdc
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
— 0.2
http://onsemi.com
2


Part Number DTC114T
Description NPN SILICON BIAS RESISTOR TRANSISTOR
Maker ON Semiconductor
Total Page 12 Pages
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